3-38 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. http://www.intersil.com or 407-727-9207 | copyright ? intersil corporation 1999 features ? 12a, 600v ? latch free operation ? typical fall time <500ns ? high input impedance ? low conduction loss description the igbt is a mos gated high voltage switching device combining the best features of mosfets and bipolar transistors. the device has the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between +25 o c and +150 o c. the igbts are ideal for many high voltage switching applica- tions operating at frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. packaging availability part number package brand HGTP12N60D1 to-220ab g12n60d1 april 1995 HGTP12N60D1 12a, 600v n-channel igbt package jedec to-220ab collector (flange) gate collector emitter terminal diagram n-channel enhancement mode c e g absolute maximum ratings t c = +25 o c, unless otherwise speci?ed HGTP12N60D1 units collector-emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector-gate voltage r ge = 1m w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv cgr 600 v collector current continuous at t c = +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 21 a at v ge = 15v at t c = +90 o c . . . . . . . . . . . . . . . . . . . i c90 12 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 48 a gate-emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 25 v switching safe operating area at t j = +150 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . .ssoa 30a at 0.8 bv ces - power dissipation total at t c = +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 75 w power dissipation derating t c > +25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to +150 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 260 o c note: 1. repetitive rating: pulse width limited by maximum junction temperature. intersil vmcorporation igbt product is covered by one or more of the following u.s. patents: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 file number 2830.3
3-39 speci?cations HGTP12N60D1 electrical speci?cations t c = +25 o c, unless otherwise speci?ed parameters symbol test conditions limits units min typ max collector-emitter breakdown voltage bv ces i c = 250 m a, v ge = 0v 600 - - v collector-emitter leakage voltage i ces v ce = bv ces t c = +25 o c - - 1.0 m a v ce = 0.8 bv ces t c = +125 o c - - 4.0 ma collector-emitter saturation voltage v ce(sat) i c = i c90 , v ge = 15v t c = +25 o c - 1.9 2.5 v t c = +125 o c - 2.1 2.7 v gate-emitter threshold voltage v ge(th) i c = 250 m a, v ce = v ge , t c = +25 o c 3.0 4.5 6.0 v gate-emitter leakage current i ges v ge = 20v - - 500 na gate-emitter plateau voltage v gep i c = i c90 , v ce = 0.5 bv ces - 7.2 - v on-state gate charge q g(on) i c = i c90 , v ce = 0.5 bv ces v ge = 15v - 45 60 nc v ge = 20v - 70 90 nc current turn-on delay time t d(on)i l = 500 m h, i c = i c90 , r g = 25 w , v ge = 15v, t j = +150 o c, v ce = 0.8 bv ces - 100 - ns current rise time t ri - 150 - ns current turn-off t d(off)i - 430 600 ns current fall time t fi - 430 600 ns turn-off energy (note 1) w off - 1.8 - mj thermal resistance igbt r q jc - - 1.67 o c/w note: 1. turn-off energy loss (w off ) is de?ned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). the HGTP12N60D1 was tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. typical performance curves figure 1. transfer characteristics (typical) figure 2. saturation characteristics (typical) 20 16 12 8 4 0 i ce , collector-emitter current (a) 0246 810 v ge , gate-emitter voltage (v) t c = +150 o c t c = +25 o c t c = -40 o c pulse duration = 250 m s duty cycle < 0.5% v ce = 10v 20 15 10 5 0 012345 v ge , collector-emitter voltage (v) pulse duration = 250 m s duty cycle < 0.5% t c = +25 o c v ge = 15v v ge = 10v v ge = 7.5v v ge = 7.0v v ge = 6.5v v ge = 6.0v v ge = 5.7v i ce , collector-emitter current (a)
3-40 HGTP12N60D1 figure 3. dc collector current vs case temperature figure 4. fall time vs collector-emitter current figure 5. capacitance vs collector-emitter voltage figure 6. normalized switching waveforms at con- stant gate current. (refer to application notes an7254 and an7260) figure 7. saturation voltage vs collector-emitter current figure 8. turn-off switching loss vs collector- emitter current typical performance curves (continued) 25 20 15 10 5 0 i ce , dc collector current (a) +25 +50 +75 +100 +125 +150 t j , case temperature ( o c) v ge = 15v 1200 1000 800 600 400 200 0 t fi , fall time (ns) 11020 i ce , collector-emitter current (a) v ce = 480v, v ge = 10v and 15v t j = +150 o c, r ge = 25 w , l = 500 m h 3000 2500 2000 1500 1000 500 0 c, capacitance (pf) 0 5 10 15 20 25 v ce , collector-emitter voltage (v) f = 1mhz ciss coss crss 600 450 300 150 0 v ce , collector-emitter voltage (v) 10 7.5 5.0 2.5 0 v ge , gate-emitter voltage (v) 20 i g(ref) i g(act) 80 i g(ref) i g(act) time ( m s) 0.75 bv ces 0.50 bv ces 0.25 bv ces 0.75 bv ces 0.50 bv ces 0.25 bv ces v cc = bv ces v cc = bv ces r l = 60 w i g(ref) = 0.868ma v ge = 10v 4 3 2 1 0 v ce(on) , saturation voltage (v) 11020 i ce , collector-emitter current (a) t j = +150 o c v ge = 10v v ge = 15v 5.0 1.0 0.1 w off , turn-off switching loss (mj) 120 10 i ce , collector-emitter current (a) t j = +150 o c, v ge = 10v r ge = 25 w , l = 500 m h v ce = 480v v ce = 240v
3-41 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?cation. intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/o r speci?cations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site http://www.intersil.com sales of?ce headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (407) 724-7000 fax: (407) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil (taiwan) ltd. taiwan limited 7f-6, no. 101 fu hsing north road taipei, taiwan republic of china tel: (886) 2 2716 9310 fax: (886) 2 2715 3029 HGTP12N60D1 figure 9. turn-off delay vs collector-emitter current figure 10. operating frequency vs collector- emitter current and voltage typical performance curves (continued) 1000 100 t d(off)i , turn-off delay (ns) 11020 i ce , collector-emitter current (a) v ce = 240v, v ge = 10v v ce = 240v, v ge = 15v v ce = 480v, v ge = 10v v ce = 480v, v ge = 15v t j = +150 o c r ge = 25 w l = 500 m h 100 10 1 f op , operating frequency (khz) 11030 i ce , collector-emitter current (a) t j = +150 o c, t c = +100 o c r g = 25 w , l = 500 m h f max1 = 0.05/t d(off)i f max2 = (p d - p c )/w off p c = duty factor = 50% r q jc = 1.67 o c/w v ce = 480v, v ge = 10v and 15v v ce = 240v, v ge = 10v and 15v p d = allowable dissipation p c = conduction dissipation note: operating frequency information operating frequency information for a typical device (figure 10) is presented as a guide for estimating device performance for a speci?c application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 7, 8 and 9. the operating frequency plot (figure 10) of a typical device shows f max1 or f max2 whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is de?ned by f max1 = 0.05/t d(off)i . t d(off)i deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. other de?nitions are possible. t d(off)i is de?ned as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. device turn-off delay can establish an additional frequency limiting condition for an application other than t jmax . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is de?ned by f max2 = (p d - p c )/w off . the allowable dissipation (p d ) is de?ned by p d = (t jmax - t c )/r q jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 10) and the conduction losses (p c ) are approximated by p c = (v ce i ce )/2. w off is de?ned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). the switching power loss (figure 10) is de?ned as f max2 w off . turn-on switching losses are not included because they can be greatly in?uenced by external circuit conditions and com- ponents.
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